NVMFD5853NL

NVMFD5853NL Power MOSFET 40 V, 10 mW, 34 A, Dual N−Channel Logic Level, Dual SO−8FL Features Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5853NLWF − Wettable Flanks Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS "20 V Continuous Drain Cur- Tmb = 25°C ID rent RYJ−mb (Notes 1, 2, 3, 4) Steady Tmb = 100°C Power Dissipation State Tmb = 25°C PD RYJ−mb (Notes 1, 2, 3) Tmb = 100°C 34 A 24 24 W 12 Continuous Drain Cur- TA = 25°C ID rent RqJA (Notes 1, 3 & 4) Steady TA = 100°C Power Dissipation RqJA (Notes 1 & 3) State TA = 25°C PD TA = 100°C 12 A 8.5 3.0 W 1.5 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 165 A Operating Junction and Storage Temperature TJ, Tstg − 55 to °C 175 Source Current (Body Diode) IS Single Pulse Drain−to−Source Avalanche EAS Energy (TJ = 25°C, VGS = 10 V, IL(pk) = 28.3 A, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes TL (1/8″ from case for 10 s) 34 A 40 mJ 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESIS...