Power MOSFET
NVMFD5873NL, NVMFD5873NLWF Power MOSFET
Features
60 V, 13 mW, 58 A, Dual N−Channel Logic Level, Dual SO−8FL
http://onse...
Description
NVMFD5873NL, NVMFD5873NLWF Power MOSFET
Features
60 V, 13 mW, 58 A, Dual N−Channel Logic Level, Dual SO−8FL
http://onsemi.com
V(BR)DSS 60 V RDS(on) MAX 13 mW @ 10 V 16.5 mW @ 4.5 V Dual N−Channel D1 Value 60 "20 58 41 PD ID 107 54 10 7.0 PD IDM TJ, Tstg IS EAS 3.1 1.6 190 − 55 to 175 58 40 A °C A mJ W A
1
Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5873NLWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device
Parameter Symbol VDSS VGS Tmb = 25°C Steady State Tmb = 100°C Tmb = 25°C Tmb = 100°C TA = 25°C Steady State TA = 100°C TA = 25°C TA = 100°C TA = 25°C, tp = 10 ms ID Unit V V A
ID MAX 58 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RYJ−mb (Notes 1, 2, 3, 4) Power Dissipation RYJ−mb (Notes 1, 2, 3) Continuous Drain Current RqJA (Notes 1, 3 & 4) Power Dissipation RqJA (Notes 1 & 3) Pulsed Drain Current
D2
G1 S1
G2 S2
W
MARKING DIAGRAM
D1 D1 S1 G1 S2 G2 5873xx AYWZZ D2 D2 5873NL = Specific Device Code for NVMFD5873NL 5873LW = Specific Device Code for NVMFD5873NLWF A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability D1 D1 D2 D2
DFN8 5x6 (SO8FL) CASE 506BT
Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL(pk) = 28.3 A, L = 0.1 mH, RG = 25 W) Lead...
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