Power MOSFET
NTLUS3A39PZ
MOSFET – Power, Single, P-Channel, ESD, UDFN, 1.6x1.6x0.55 mm
-20 V, -5.2 A
Features
• UDFN Package with E...
Description
NTLUS3A39PZ
MOSFET – Power, Single, P-Channel, ESD, UDFN, 1.6x1.6x0.55 mm
-20 V, -5.2 A
Features
UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving Ultra Low RDS(on) These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Optimized for Power Management Applications for Portable
Products, Such as Cell Phones, PMP, Media Tablets, DSC, GPS, and Others
Battery Switch High Side Load Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
VDSS
−20
V
Gate-to-Source Voltage
VGS
±8.0
V
Continuous Drain Steady TA = 25°C
ID
Current (Note 1)
State
Continuous Drain
TA = 85°C
Current (Note 1)
t ≤ 5 s TA = 25°C
−5.2
A
−3.7
−6.4
Power Dissipa-
Steady TA = 25°C
PD
tion (Note 1)
State
1.5
W
t ≤ 5 s TA = 25°C
2.3
Continuous Drain Steady TA = 25°C
ID
Current (Note 2)
State
TA = 85°C
−3.4
A
−2.4
Power Dissipation (Note 2)
TA = 25°C
PD
0.6
W
Pulsed Drain Current
tp = 10 ms
IDM
−17
A
Operating Junction and Storage Temperature
TJ,
-55 to °C
TSTG
150
Source Current (Body Diode) (Note 2)
IS
−1
A
Lead Temperature for Soldering Purposes
TL
260
°C
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliabili...
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