NTD12N10

NTD12N10 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features http://onsemi.com V(BR)DSS 100 V RDS(on) TYP 165 mW @ 10 V N−Channel D ID MAX 12 A Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the DPAK Package These are Pb−Free Devices Typical Applications PWM Motor Controls Power Supplies Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA =100°C − Pulsed (Note 3) Symbol VDSS VDGR VGS VGSM ID ID Value 100 100 ± 20 ± 30 12 7.0 36 56.6 0.38 1.76 1.28 − 55 to +175 75 Unit Vdc Vdc Vdc Vpk Adc Apk W W/°C W W °C mJ 1 °C/W 2 3 1 2 3 4 G S MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain DPAK CASE 369C (Surface Mount) STYLE 2 YWW T12 N10G 4 Drain DPAK CASE 369D (Straight Lead) STYLE 2 YWW T12 N10G 1 2 3 Gate Drain Source Y WW T12N10 G = Year = Work Week = Device Code = Pb−Free Package Free Datasheet http://www.datasheet4u.com/ IDM PD Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, IL = 12 ...