23C32340GZ

DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32340, 23C32380 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C32340 and µPD23C32380 are 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 4,194,304 words by 8 bits, WORD mode : 2,097,152 words by 16 bits). The active levels of OE (Output Enable Input) can be selected with mask-option. The µPD23C32340 and µPD23C32380 are packed in 48-pin PLASTIC TSOP(I) and 48-pin TAPE FBGA. Features Pin compatible with NOR Flash Memory Word organization 4,194,304 words by 8 bits (BYTE mode) 2,097,152 words by 16 bits (WORD mode) Page access mode BYTE mode : 8 byte random page access (µPD23C32340) 16 byte random page access (µPD23C32380) WORD mode : 4 word random page access (µPD23C32340) 8 word random page access (µPD23C32380) Operating supply voltage : VCC = 2.7 V to 3.6 V Operating supply voltage VCC 3.0 V ± 0.3 V 3.3 V ± 0.3 V Access time / Page access time ns (MAX.) 100 / 25 90 / 25 Power supply current (Active mode) mA (MAX.) Standby current (CMOS level input) µPD23C32340 40 µPD23C32380 55 µA (MAX.) 30 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Docum...