2N5003

Data Sheet No. 2N5003 Type 2N5003 Geometry 9702 Polarity PNP Qual Level: JAN - JANTXV Features: Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case. Also available in chip form using the 9702 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/512 which Semicoa meets in all cases. Generic Part Number: 2N5003 REF: MIL-PRF-19500/512 TO-59 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Collector Current, PW < 8.3 ms, < 1% duty cycle Power Disipation TA = 25oC ambient Derate above 25oC Power Disipation TC = 25oC ambient o Derate above 25 C Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC IC PT PT TJ TSTG Rating 80 100 5.5 10 15 2 11.4 58 331 -55 to +200 -55 to +200 Unit V V V A A Watt mW/oC Watt o mW/ C o C C o Data Sheet No. 2N5003 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Thermal Impedance Collector-Emitter Breakdown Voltage IC = 100 mA, IB = 0, pulsed Collector-Emitter Cutoff Current VCE = 40 V, VBE = 0, Bias Condition D VCE = 60 V, VBE = 0, Bias Condition C VCE = 100 V, VBE = 0, Bias Condition C Collector-Emitter Cutoff Current VCE = 60 V, VBE = +2.0 V, TC = 150oC Base-Emitter Cutoff Current VEB = 4 V, IC = 0, Bias Condition D VEB = 5.5 V, IC = 0, Bias Condition D Symbol V(BR)CEO ICEO ICES1 ICES2 ICEX IEBO1 IEBO...