2N5018

2N5018 SERIES Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE LOW ON RESISTANCE ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source 30V 30V -50mA 500mW -55 to 200°C -55 to 200°C 75Ω SINGLE P-CHANNEL JFET SWITCH TO-18 BOTTOM VIEW G 2 3 D S 1 STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. BVGSS VGS(off) VDS(on) IDSS IGSS ID(off) IDGO rDS(on) CHARACTERISTIC Gate to Source Breakdown Voltage Gate to Source Cutoff Voltage Drain to Source On Voltage Drain to Source Saturation Current2 Gate Leakage Current Drain Cutoff Current Drain Reverse Current Drain to Source On Resistance -10 2 -10 -10 -2 75 TYP 2N5018 MIN 30 10 -0.5 -0.5 -5 2 -10 -10 -2 150 mA nA µA nA Ω MAX 2N5019 MIN 30 5 V MAX UNITS CONDITIONS IG = 1µA, VDS = 0V VDS = -15V, ID = -1µA VGS = 0V, ID = -6mA VGS = 0V, ID = -3mA VDS = -20V, VGS = 0V VGS = 15V, VDS = 0V VDS = -15V, VGS = 12V VDS = -15V, VGS = 7V VDG = -15V, IS = 0A ID = -1mA, VGS = 0V Linear Integrated Systems 4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261 DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. rds(on) Ciss CHARACTERISTIC Drain to Source On Resistance Input Capacitance TYP 2N5018 MIN MAX 75 45 10 Crss Reverse T...