2N5038 TRANSISTOR Datasheet

2N5038 Datasheet, PDF, Equivalent


Part Number

2N5038

Description

HIGH CURRENT NPN SILICON TRANSISTOR

Manufacture

STMicroelectronics

Total Page 4 Pages
Datasheet
Download 2N5038 Datasheet


2N5038
2N5038
HIGH CURRENT NPN SILICON TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
DESCRIPTION
The 2N5038 is a silicon planar multiepitaxial NPN
transistors in Jedec TO-3 metal case. They are
especially intended for high current and switching
applications.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEX Collector-Emitter Voltage (VBE=-1.5V RBE=100)
VCER Collector-Emitter Voltage (RBE < 50)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC Collector Current
ICM Collector Peak Current
IB Base Current
Ptot Total Dissipation at Tc 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
June 1997
Value
150
150
110
90
7
20
30
5
140
-65 to 200
200
Unit
V
V
V
V
V
A
A
A
W
oC
oC
1/4

2N5038
2N5038
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.25
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
ICEV
Parameter
Collector Cut-off
Current (VBE = -1.5V)
Test Conditions
VCE = 140 V
VCE = 100 V Tc = 150 oC
Min. Typ.
ICEO
IEBO
Collector Cut-off
Current (IB = 0)
Emitter Cut-off Current
(IC = 0)
VCEO(sus)Collector-Emitter
Sustaining Voltage
VCER(sus)Collector-Emitter
Sustaining Voltage
VCEX(sus)Collector-Emitter
Sustaining Voltage
VCE(sat)Collector-Emitter
Saturation Voltage
VBE(sat)Collector-Emitter
Saturation Voltage
VBEBase-Emitter Voltage
hFEDC Current Gain
hfe
CCBO
tr
Small Signal Current
Gain
Collector-Base
Capacitance
Rise Time
ts Storage Time
VCE = 70 V
VEB = 7 V
VEB = 5 V
IC = 0.2 A
IC = 0.2 A RBE = 50
IC = 0.2 A RBE = 100 VBE =-1.5V
IC = 12 A
IC = 20 A
IC = 20 A
IB = 1.2 A
IB = 5 A
IB = 5 A
IC = 12 A VCE = 5 V
IC = 2 A VCE = 5 V
IC = 12 A VCE = 5 V
IC = 2 A VCE = 10 V f = 5 MHz
IE = 0
VCB = 10 V f = 1 MHz
IC = 12 A VCC = 30 V
IB1 = -IB2 = 1.2A
90
110
150
50
20
12
Max.
50
10
20
50
5
1
2.5
3.3
1.8
250
100
300
0.5
1.5
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
pF
µs
µs
tf Fall Time
0.5 µs
Is/b∗∗
Second Breakdown
Collector Current
VCE = 28 V
VCE = 45 V
Es/b Second Breakdown
Energy
VBE = -4 V RBE = 20 L = 180µH
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5
0.9
13
A
A
mJ
2/4


Features 2N5038 HIGH CURRENT NPN SILICON TRANSIST OR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high c urrent and switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSO LUTE MAXIMUM RATINGS Symbol V CBO V CEX V CER V CEO V EBO IC I CM IB P tot T s tg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE =-1.5V R BE =100 Ω ) Collector-Emi tter Voltage (R BE < 50 Ω ) Collector -Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Co llector Peak Current Base Current Total Dissipation at T c ≤ 25 C o Value 1 50 150 110 90 7 20 30 5 140 -65 to 200 200 Unit V V V V V A A A W o o Storag e Temperature Max. Operating Junction T emperature C C June 1997 1/4 2N5038 THERMAL DATA R thj-case Thermal Resist ance Junction-case Max 1.25 o C/W ELE CTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Sy.
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