HY27UG088G5B

1 HY27UG088G(5/D)B Series 8Gbit (1Gx8bit) NAND Flash 8Gb NAND FLASH HY27UG088G(5/D)B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.2 / Jan. 2008 1 Free Datasheet http://www.datasheet4u.com/ 1 HY27UG088G(5/D)B Series 8Gbit (1Gx8bit) NAND Flash Document Title 8Gbit (1Gx8bit) NAND Flash Memory Revision History Revision No. 0.0 Initial Draft. 1) Correct Read Cache figure 0.1 2) Add ULGA package 3) Correct Block erase 0.2 1) Delete Preliminary Jan. 15. 2008 Jun. 27. 2007 Preliminary History Draft Date Jun. 22. 2007 Remark Preliminary Rev 0.2 / Jan. 2008 2 Free Datasheet http://www.datasheet4u.com/ 1 HY27UG088G(5/D)B Series 8Gbit (1Gx8bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications MULTIPLANE ARCHITECTURE - Array is split into two independent planes. Parallel Operations on both planes are available, halving Program and erase time. NAND INTERFACE - x8 bus width. - Address/ Data Multiplexing - Pinout compatiblity for all densities SUPPLY VOLTAGE - 3.3V device : Vcc = 2.7 V ~3.6 V MEMORY CELL ARRAY - x8 : (2K + 64) bytes x 64 pages x 8192 blocks PAGE SIZE - (2K + 64 spare) Bytes BLOCK SIZE - (128K + 4Kspare) Bytes PAGE READ / PROGRAM - Random access : 25us (max.) - Sequential access : 25ns (min.) - Page program time : 200us (typ.) - Multi-page progra...