MBRT20080R

MBRT20045 thru MBRT200100R Silicon Power Schottky Diode Features High Surge Capability Types up to 100 V VRRM Isolation Type Package Three Tower Package VRRM = 20 V - 100 V IF = 200 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive p p peak reverse voltage g RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 125 °C TC = 25 °C, tp = 8.3 ms Conditions MBRT20045 (R) MBRT20060 (R) MBRT20080 (R) MBRT200100 (R) Unit 45 32 45 200 1500 -40 to 150 -40 to 175 60 42 60 200 1500 -40 to 150 -40 to 175 80 57 80 200 1500 -40 to 150 -40 to 175 100 70 100 200 1500 -40 to 150 -40 to 175 V V V A A °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol VF IR Conditions IF = 100 A, Tj = 25 °C VR = 20 V, Tj = 25 °C VR = 20 V, Tj = 125 °C MBRT20045 (R) MBRT20060(R) MBRT20080 (R) MBRT200100 (R) Unit 0.75 1 20 0.18 0.8 1 20 0.18 0.88 1 20 0.18 0.88 1 20 0.18 V mA Thermal characteristics Thermal resistance, junction case RthJC °C/W www.genesicsemi.com 1 Free Datasheet http://www.datasheet4u.com/ MBRT20045 thru MBRT200100R www.genesicsemi.com 2 Free Datasheet http://www.datasheet4u.com/ ...