UNISONIC TECHNOLOGIES CO., LTD
MMDT8050S
NPN EPITAXIAL SILICON TRANSISTOR
LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR
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UNISONIC TECHNOLOGIES CO., LTD
MMDT8050S
NPN EPITAXIAL SILICON
TRANSISTOR
LOW VCESAT
NPN EPITAXIAL PLANAR
TRANSISTOR
DESCRIPTION
The UTC MMDT8050S is a Dual
NPN epitaxial planar
transistor. It has low VCE(sat) performance, and the
transistor elements are independent, eliminating interference.
FEATURES
* Low VCE(sat), VCE(sat) = 40mV (typ.) @ IC / IB = 50mA / 2.5mA *
Transistor elements are independent, eliminating interference. * Mounting cost and area can be cut in half.
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MMDT8050SL-AL6-R
MMDT8050SG-AL6-R
Package SOT-363
Pin Assignment 123456 E1 B1 C2 E2 B2 C1
Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd
1 of 4
QW-R218-012.G
MMDT8050S
NPN EPITAXIAL SILICON
TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
6
V
Collector Current (DC)
IC
700
mA
Collector Current (Pulse)
ICP
1.5 (Note 2)
A
Total Power Dissipation
PD
200
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Single pulse, PW=10ms.
ELECTRICAL CHARACTE...
