Document
AOK15B60D
600V, 15A Alpha IGBT TM with Diode
General Description
Product Summary
The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copackage diode is targeted for minimal losses in motor control applications.
VCE IC (TC=100°C) VCE(sat) (TC=25°C)
100% Eon/Eoff Tested 100% Qrr Tested 100% Short Circuit Current Tested*
600V 15A 1.6V
Top View
TO-247
C
AOK15B60D
E C G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Collector-Emitter Voltage
V CE
Gate-Emitter Voltage
V GE
Continuous Collector TC=25°C
Current
TC=100°C
IC
Pulsed Collector Current, Limited by TJmax
I CM
Turn off SOA, VCE ≤ 600V, Limited by TJmax
I LM
Continuous Diode Forward Current
TC=25°C TC=100°C
IF
Diode Pulsed Current, Limited by TJmax
I FM
Short circuit withstanding time VGE = 15V, VCE ≤ 400V, Delay between short circuits ≥ 1.0s, TC=25°C
TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case * VCE equal to 50V
t SC
PD T J , T STG
TL
Symbol R θ JA R θ JC R θ JC
G
AOK15B60D 600 ±20 30 15 60 60 30 15 60
10
167 83.3 -55 to 175
300
AOK15B60D 40 0.9 1.5
E
Units V V A A A A A
µs
W °C
°C
Units °C/W °C/W °C/W
Rev.1.0: Nov 2013
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AOK15B60D
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage
V CE(sat) Collector-Emitter Saturation Voltage
VF
Diode Forward Voltage
V GE(th) Gate-Emitter Threshold Voltage
IC=250µA, VGE=0V, TJ=25°C
TJ=25°C
VGE=15V, IC=15A TJ=125°C
TJ=175°C
TJ=25°C
VGE=0V, IC=15A
TJ=125°C
TJ=175°C
VCE=VGE, IC=250µA
TJ=25°C
I CES
Zero Gate Voltage Collector Current VCE=600V, VGE=0V TJ=125°C
TJ=175°C
I GES
Gate-Emitter leakage current
VCE=0V, VGE=±20V
g FS
Forward Transconductance
VCE=20V, IC=15A
DYNAMIC PARAMETERS
C ies C oes C res Qg Q ge Q gc
I C(SC)
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Emitter Charge Gate to Collector Charge Short circuit collector current, Max. 1000 short circuits, Delay between short circuits ≥ 1.0s
VGE=0V, VCE=25V, f=1MHz VGE=15V, VCE=480V, IC=15A VGE=15V, VCE=400V, RG=20Ω
Rg
Gate resistance
VGE=0V, VCE=0V, f=1MHz
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
t D(on)
Turn-On DelayTime
tr t D(off)
Turn-On Rise Time Turn-Off Delay Time
TJ=25°C VGE=15V, VCE=400V, IC=15A,
tf
Turn-Off Fall Time
RG=20Ω,
E on
Turn-On Energy
Parasitic Ιnductance=150nH
E off
Turn-Off Energy
E total
Total Switching Energy
t rr Q rr I rm
Diode Reverse Recovery Time
TJ.