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AOK15B60D Dataheets PDF



Part Number AOK15B60D
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description IGBT
Datasheet AOK15B60D DatasheetAOK15B60D Datasheet (PDF)

AOK15B60D 600V, 15A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copackage diode is targeted for minimal losses in motor control applications. VCE IC (TC=100°C) VCE(sat) (TC=25°C) 100% Eon/Eoff Tested 100% Qr.

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AOK15B60D 600V, 15A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copackage diode is targeted for minimal losses in motor control applications. VCE IC (TC=100°C) VCE(sat) (TC=25°C) 100% Eon/Eoff Tested 100% Qrr Tested 100% Short Circuit Current Tested* 600V 15A 1.6V Top View TO-247 C AOK15B60D E C G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE Gate-Emitter Voltage V GE Continuous Collector TC=25°C Current TC=100°C IC Pulsed Collector Current, Limited by TJmax I CM Turn off SOA, VCE ≤ 600V, Limited by TJmax I LM Continuous Diode Forward Current TC=25°C TC=100°C IF Diode Pulsed Current, Limited by TJmax I FM Short circuit withstanding time VGE = 15V, VCE ≤ 400V, Delay between short circuits ≥ 1.0s, TC=25°C TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case * VCE equal to 50V t SC PD T J , T STG TL Symbol R θ JA R θ JC R θ JC G AOK15B60D 600 ±20 30 15 60 60 30 15 60 10 167 83.3 -55 to 175 300 AOK15B60D 40 0.9 1.5 E Units V V A A A A A µs W °C °C Units °C/W °C/W °C/W Rev.1.0: Nov 2013 www.aosmd.com Page 1 of 9 AOK15B60D Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage V CE(sat) Collector-Emitter Saturation Voltage VF Diode Forward Voltage V GE(th) Gate-Emitter Threshold Voltage IC=250µA, VGE=0V, TJ=25°C TJ=25°C VGE=15V, IC=15A TJ=125°C TJ=175°C TJ=25°C VGE=0V, IC=15A TJ=125°C TJ=175°C VCE=VGE, IC=250µA TJ=25°C I CES Zero Gate Voltage Collector Current VCE=600V, VGE=0V TJ=125°C TJ=175°C I GES Gate-Emitter leakage current VCE=0V, VGE=±20V g FS Forward Transconductance VCE=20V, IC=15A DYNAMIC PARAMETERS C ies C oes C res Qg Q ge Q gc I C(SC) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Emitter Charge Gate to Collector Charge Short circuit collector current, Max. 1000 short circuits, Delay between short circuits ≥ 1.0s VGE=0V, VCE=25V, f=1MHz VGE=15V, VCE=480V, IC=15A VGE=15V, VCE=400V, RG=20Ω Rg Gate resistance VGE=0V, VCE=0V, f=1MHz SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) t D(on) Turn-On DelayTime tr t D(off) Turn-On Rise Time Turn-Off Delay Time TJ=25°C VGE=15V, VCE=400V, IC=15A, tf Turn-Off Fall Time RG=20Ω, E on Turn-On Energy Parasitic Ιnductance=150nH E off Turn-Off Energy E total Total Switching Energy t rr Q rr I rm Diode Reverse Recovery Time TJ.


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