AOK20S60L
600V 20A α MOS TM Power Transistor
General Description
Product Summary
The AOK20S60L has been fabricated us...
AOK20S60L
600V 20A α MOS TM Power
Transistor
General Description
Product Summary
The AOK20S60L has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
100% UIS Tested 100% Rg Tested
700V 80A 0.199Ω 20nC 4.9µJ
D
AOK20S60L
S D G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
ID
IDM IAR EAR EAS
TC=25°C Power Dissipation B Derate above 25oC
PD
MOSFET dv/dt ruggedness Peak diode recovery dv/dt H
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J Thermal Characteristics
TL
Parameter
Symbol
Maximum Junction-to-Ambient A,D Maximum Case-to-sink A
RθJA RθCS
Maximum Junction-to-Case
RθJC
AOK20S60L 600 ±30 20 14 80 3.4 23 188 266 2.1 100 20
-55 to 150
300
AOK20S60L 40 0.5 0.47
G S
Units V V
A
A mJ mJ W W/ oC V/ns °C
°C
Units °C/W °C/W °C/W
Rev 1.0: Sepetember 2017
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Electrical Characteristics (TJ=25°C un...