AOK29S50

AOK29S50 500V 29A α MOS TM Power Transistor General Description Product Summary The AOK29S50 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested Top View TO-247 600V 120A 0.15Ω 26.6nC 6.3µJ D AOK29S50 DS G Orderable Part Number Package Type AOK29S50L TO-247 Green Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy G EAS TC=25°C Power Dissipation B Derate above 25oC PD MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS Maximum Junction-to-Case RθJC G S Form Tube AOK29S50 500 ±30 29 18 120 7.5 110 608 357 2.9 100 20 -55 to 150 300 AOK29S50 40 0.5 0.35 Minimum Order Quantity 240 Units V V A A mJ mJ W W/ oC V/ns °C °C...