N-Channel MOSFET
AOK5N100
1000V,4A N-Channel MOSFET
General Description
Product Summary
The AOK5N100 is fabricated using an advanced h...
Description
AOK5N100
1000V,4A N-Channel MOSFET
General Description
Product Summary
The AOK5N100 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
For Halogen Free add "L" suffix to part number: AOK5N100L
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
Top View TO-247
1100@150℃ 4A < 4.2Ω
D
AOK5N100
S D G
Orderable Part Number
AOK5N100L
Package Type
TO-247 Green
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS dv/dt
TC=25°C Power Dissipation B Derate above 25°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A
Maximum Junction-to-Case
Symbol RθJA RθCS RθJC
G S
Form
Tube
Minimum Order Quantity
240
AOK5N100 1000 ±30 4 2.5 15 2.8 117 235 5 195 1.6
-55 to 150
300
AOK5N100 40 0.5 0.64
Units V V
A
A mJ mJ V/ns W W/°C °C
°C
Units °...
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