SI1553CDL

Si1553CDL Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 RDS(on) () 0.390 at VGS = 4.5 V 0.510 at VGS = 2.7 V 0.578 at VGS = 2.5 V 0.850 at VGS = - 4.5 V P-Channel - 20 1.35 at VGS = - 2.7 V 1.48 at VGS = - 2.5 V ID (A)a 0.7 0.5 0.5 - 0.5 - 0.5 - 0.3 0.95 0.55 Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC Converter D1 S2 SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code G1 2 5 G2 RH XX YY G2 Lot Traceability and Date Code G1 D2 3 4 S2 Part # Code S1 N-Channel MOSFET D2 P-Channel MOSFET Top View Ordering Information: Si1553CDL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Source-Drain Current Diode Current Pulsed Drain Current (t = 300 µs) TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD TC = 25 °C TA = 25 °C IS IDM ID Symbol VDS VGS 0.7 0.6 0.7 b, c N-Channel 20 ± 12 P-Channel - 20 - 0.5 - 0.4 - 0.4b, c - 0.4b, c - 0.3 - 0.2b, c -1 0.34 0.22 0.29b, c 0.18b, c - 55 to 150 Unit V 0.5b, c 0.3 0.2b, c 2 0.34 0.22 0.29 b, c A W 0.18b, c °C THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Amb...