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1N5622US Dataheets PDF



Part Number 1N5622US
Manufacturers Microsemi
Logo Microsemi
Description (1N5614US - 1N5622US) VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS
Datasheet 1N5622US Datasheet1N5622US Datasheet (PDF)

1N5614US thru 1N5622US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION DESCRIPTION This “standard recovery” surface mount rectifier diode series is military qualified to MILPRF-19500/427 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an int.

  1N5622US   1N5622US


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1N5614US thru 1N5622US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION DESCRIPTION This “standard recovery” surface mount rectifier diode series is military qualified to MILPRF-19500/427 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are also available in axial-leaded thru-hole package configurations (see separate data sheet for 1N5614 thru 1N5622). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPEARANCE WWW . Microsemi . C OM Package “A” or D-5A FEATURES • • • • • • • Surface mount package series equivalent to the JEDEC registered 1N5614 to 1N5622 series Voidless hermetically sealed glass package Triple-Layer Passivation Internal “Category I” Metallurgical bonds Working Peak Reverse Voltage 200 to 1000 Volts. JAN, JANTX, JANTXV, and JANS available per MILPRF-19500/427 Axial-leaded equivalents also available (see separate data sheet for 1N5614 thru 1N5622) • • • • • • • • APPLICATIONS / BENEFITS Standard recovery 1 Amp rectifiers 200 to 1000 V Military and other high-reliability applications General rectifier applications including bridges, halfbridges, catch diodes, etc. High forward surge current capability Extremely robust construction Low thermal resistance Controlled avalanche with peak reverse power capability Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS • • • • • • Junction & Storage Temperature: -65 C to +200 C Thermal Resistance: 13oC/W junction to end cap Thermal Impedance: 4.5oC/W @ 10 ms heating time Average Rectified Forward Current (IO): 1.0 Amps @ TA = 55ºC and 0.75 Amps @ TA = 100ºC Forward Surge Current: 30 Amps @ 8.3 ms half-sine Solder Temperatures: 260ºC for 10 s (maximum) o o MECHANICAL AND PACKAGING • • CASE: Hermetically sealed voidless hard glass with Tungsten slugs TERMINALS: End caps are Copper with Tin/Lead (Sn/Pb) finish. Note: Previous inventory had solid Silver end caps with Tin/Lead (Sn/Pb) finish. MARKING & POLARITY: Cathode band only TAPE & REEL option: Standard per EIA-481-B WEIGHT: 193 mg See package dimensions and recommended pad layout on last page REVERSE CURRENT (MAX.) IR @ VRWM μA 25 C 0.5 0.5 0.5 0.5 0.5 o o • • • • ELECTRICAL CHARACTERISTICS TYPE WORKING PEAK REVERSE VOLTAGE VRWM VOLTS 1N5614US 1N5616US 1N5618US 1N5620US 1N5622US 200 400 600 800 1000 MINIMUM BREAKDOWN VOLTAGE VBR @ 50μA VOLTS 220 440 660 880 1100 AVERAGE RECTIFIED CURRENT IO @ T A (NOTE 1) AMPS o o 55 C 100 C 1.00 .750 1.00 .750 1.00 .750 1.00 .750 1.00 .750 FORWARD VOLTAGE (MAX.) VF @ 3A VOLTS MAXIMUM SURGE CURRENT IFSM (NOTE 2) AMPS 30 30 30 30 30 REVERSE RECOVERY (NOTE 3) trr μs 2.0 2.0 2.0 2.0 2.0 1N5614US – 1N5622US 0.8 MIN. 1.3 MAX. 100 C 25 25 25 25 25 NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC, derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 oC. NOTE 2: TA = 100 oC, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A Copyright © 2009 10-06-2009 REV D; SA7-45.pdf Microsemi Page 1 Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Free Datasheet http://www.datasheet4u.com/ 1N5614US thru 1N5622US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION WWW . Microsemi . C OM Symbol VBR VRWM VF IR C trr SYMBOLS & DEFINITIONS Definition Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. GRAPHS 1N5614US – 1N5622US FIGURE 1 TYPICAL FORWARD VOLTAGE vs FORWARD CURRENT FIGURE 2 TYPICAL REVERSE CURRENT vs PIV.


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