APT47N65BC3

APT47N65BC3 APT47N65SC3 650V 47A 0.070Ω COOL MOS Po we r Se miconduc tors Super Junction MOSFET Ultra low RDS(ON) Increased Power Dissipation Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated TO-247 or Surface Mount D3PAK Package TO-247 D3PAK D G S MAXIMUM RATINGS Symbol Parameter All Ratings: TC = 25°C unless otherwise specified. APT47N65B_SC3 UNIT VDSS ID IDM VGS VGSM PD Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor 650 47 141 ±20 ±30 417 3.33 Volts Amps Volts Watts W/°C TJ,TSTG TL dv/dt IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 47A, TJ = 125°C) Repetitive Avalanche Current 7 ++++Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy 4 Single Pulse Avalanche Energy 4 -55 to 150 260 50 20 1 1800 °C V/ns Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BVDSS RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 650 Drain-Source On-State Resistance 2 (VGS = 10V, ID = 30 A) 0.06 Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V) 0.5 Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, T J = 150°C) Gate-Source Leakage Cu...