2SD880-Q

MCC Micro Commercial Components TM
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD880-Q 2SD880-Y 2SD880-GR NPN Silicon Power Transistors Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Power amplifier applications Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Electrical Characteristics @ 25OC Unless Otherwise Specified OFF CHARACTERISTICS V(BR)CEO Symbol Parameter Min Type Max Units Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 60 60 7 3 1.5 -55 to +150 -55 to +150 Unit V V V A W к к TO-220 B F Q T A U 1 2 H 3 C S V(BR)CBO V(BR)EBO ICBO IEBO ON CHARACTERISTICS hFE Collector-Emitter Breakdown Voltage (IC=50mAdc, IB=0) Collector-Base Breakdown Voltage (IC=100uAdc, IE=0) Emitter-Base Breakdown Voltage (IE=100uAdc, IC=0) Collector-Base Cutoff Current (VCB=60Vdc,IE=0) Emitter-Base Cutoff Current (VEB=7Vdc, IC=0) 60 --- --- Vdc K 60 --- --- Vdc 7 --- --- Vdc --- --- 100 uAdc L V D J --- --- 100 uAdc G N PIN 1. PIN 2. PIN 3. BASE COLLECTOR EMITTER R VCE(sat) VBE fT Cob Classification OF hFE(1) Rank Range Q 60-120 ton ts tf Forward Current Transfer ratio (IC=500mAdc, VCE=5Vdc) Collector-Emitt...