2SA1190

2SA1190 Silicon PNP Epitaxial REJ03G0640-0200 (Previous ADE-208-1012) Rev.2.00 Aug.10.2005 Application Low frequency low noise amplifier Complementary pair with 2SC2855 and 2SC2856 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating –90 –90 –5 –100 100 400 150 –55 to +150 Unit V V V mA mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 6 Free Datasheet http://www.datasheet4u.com/ 2SA1190 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current trnsfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE*1 VCE(sat) VBE(sat) fT Cob NF Min –90 –90 –5 — — 250 — — — — — 2SA1190 Typ Max — — — — — — — –0.1 — –0.1 — 800 –0.05 –0.7 130 3.2 0.15 –0.15 –1.0 — — 1.5 Unit V V V µA µA Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –70 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, 2 IC = –2 mA* V V MHz pF dB IC = –10 mA, 2 IB = –1 mA* VCE = –6 V,...