2SB1504

Power Transistors 2SB1504 Silicon PNP epitaxial planar type darlington Unit: mm For power switching High forward current transfer ratio hFE High-speed switching Allowing automatic insertion with radial taping 3.8±0.2 10.8±0.2 7.5±0.2 4.5±0.2 0.65±0.1 2.5±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ 0.8 C 16.0±1.0 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −50 −7 −8 −12 1.5 150 −55 to +150 Unit V V V A A W °C °C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.5±0.1 0.8 C 1 2 3 2.05±0.2 0.4±0.1 2.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package Internal Connection C B E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 * hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions IC = −30 mA, IB = 0 VCB = −50 V, IE = 0 VEB = −7 V, IC = 0 VCE = −3 V, IC = −4 A VCE = −3 V, IC = −8 A IC = −4 A, IB = −8 mA IC = −4 A, IB = −8 mA VCB = −10 V, IE = 0.5 A, f = 200 MHz IC = −4 A, IB1 = −8 mA, IB2 = 8 ...