Document
EMI4172 Common Mode Filter with ESD Protection
Functional Description
The EMI4172 is an integrated common mode filter providing both ESD protection and EMI filtering for high speed digital serial interfaces such as HDMI or MIPI D-PHY. The EMI4172 provides protection for two differential data line pairs in a small RoHS-compliant WDFN10 package.
Features
http://onsemi.com MARKING DIAGRAMS
2TMG G
• Highly Integrated Common Mode Filter (CMF) with ESD Protection • • • • • •
provides protection and EMI reduction for systems using High Speed Serial Data Lines with cost and space savings over discrete solutions Large Differential Mode Bandwidth with Cutoff Frequency > 2 GHz High Common Mode Stop Band Attenuation: >15 dB at 700 MHz Provides ESD Protection to IEC61000-4-2 Level 4, ±8 kV Contact Discharge Low Channel Input Capacitance Provides Superior Impedance Matching Performance Low Profile Package with Small Footprint in WDFN10 2 x 2.5 mm Pb−Free Package These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
WDFN10 CASE 511BM 2T M G
= Specific Device Code = Date Code = Pb−Free Package
(*Note: Microdot may be in either location)
PIN CONNECTIONS
In_1+ In_1− GND In_2+ In_2− 1 2 3 4 5
(Top View)
10 9 8 7 6
Out_1+ Out_1− GND Out_2+ Out_2−
Applications
• HDMI/DVI Display in Mobile Phones • MIPI D-PHY (CSI-2, DSI, etc) in Mobile Phones and Digital Still
Cameras
1 External (Connector) 4 5 2 10 9 7 6 Internal (ASIC)
ORDERING INFORMATION
Device EMI4172MTTAG Package WDFN10 (Pb−Free) Shipping† 3000/Tape & Reel
3, 8
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Figure 1. EMI4172 Electrical Schematic
© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 0
1
Publication Order Number: EMI4172/D
Free Datasheet http://www.datasheet4u.com/
EMI4172
PIN FUNCTION DESCRIPTION
Pin Name In_1+ In_1− Out_1+ Out_1− In_2+ In_2− Out_2+ Out_2− VN Pin No. 1 2 10 9 4 5 7 6 3, 8 Type I/O I/O I/O I/O I/O I/O I/O I/O GND Description CMF Channel 1+ to Connector (External) CMF Channel 1− to Connector (External) CMF Channel 1+ to ASIC (Internal) CMF Channel 1− to ASIC (Internal) CMF Channel 2+ to Connector (External) CMF Channel 2− to Connector (External) CMF Channel 2+ to ASIC (Internal) CMF Channel 2− to ASIC (Internal) Ground
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter Operating Temperature Range Storage Temperature Range Maximum Lead Temperature for Soldering Purposes (1/8” from Case for 10 seconds) DC Current per Line Symbol TOP TSTG TL ILINE Value −40 to +85 −65 to +150 260 100 Unit °C °C °C mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol ILEAK VF CIN RCH f3dB Fatten VESD Parameter Channel Leakage Current Channel Negative Voltage Channel Input Capacitance to Ground (Pins 1, 2, 4, 5 to Pins 3, 8) Channel Resistance (Pins 1−10, 2−9, 4−7 and 5−6) Differential Mode Cut−off Frequency Common Mode Stop Band Attenuation In−system ESD Withstand Voltage a) Contact discharge per IEC 61000−4−2 standard, Level 4 (External Pins) b) Contact discharge per IEC 61000−4−2 standard, Level 1 (Internal Pins) TLP Clamping Voltage (See Figure 12) 50 W Source and Load Termination @ 700 MHz (Notes 1 and 2) ±8 ±2 Forward IPP = 8 A Forward IPP = 16 A Forward IPP = −8 A Forward IPP = −16 A TA = 25°C, IPP = 1 A, tP = 8/20 ms Any I/O pin to Ground; Notes 1 and 3 (Note 3) IT = 1 mA; (Note 4) 5.6 12 18 −6 −12 1.36 0.6 5.0 9.0 V V V V V V Test Conditions TA = 25°C, VIN = 5 V, GND = 0 V TA = 25°C, IF = 10 mA TA = 25°C, At 1 MHz, GND = 0 V, VIN = 1.65 V 0.1 0.8 8.0 2.0 15 Min Typ Max 1.0 1.5 1.3 Unit mA V pF W GHz dB kV
VCL
RDYN
Dynamic Resistance Positive Transients Negative Transients Reverse Working Voltage Breakdown Voltage
VRWM VBR
1. Standard IEC61000−4−2 with CDischarge = 150 pF, RDischarge = 330, GND grounded. 2. These measurements performed with no external capacitor. 3. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level. 4. VBR is measured at pulse test current IT.
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2
Free Datasheet http://www.datasheet4u.com/
EMI4172
TYPICAL CHARACTERISTICS
0 −1 −2 −3 dB dB 1.E+07 1.E+08 FREQUENCY (Hz) 1.E+09 1.E+10 −4 −5 −6 −7 −8 −9 1.E+06 0 −5 −10 −15 −20 −25 −30 −35 −40 1.E+06 1.E+07 1.E+08 FREQUENCY (Hz) 1.E+09 1.E+10
Figure 2. Differential Mode Attenuation vs. Frequency
Figure 3. Common Mode Attenuation vs. Frequency
MIPI DSI (D−PHY) Host
MIPI DSI (D−PHY) Client
EMI4172 Evaluation Board
Figure 4. MIPI D−PHY LP Mode Test.