NTD4860N

NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features ăTrench Technology ăLow RDS(on) to Minimize Conduction Losses ăLow Capacitance to Minimize Driver Losses ăOptimized Gate Charge to Minimize Switching Losses ăThese are Pb-Free Devices Applications http://onsemi.com V(BR)DSS 25 V RDS(ON) MAX 7.5 mW @ 10 V 11.1 mW @ 4.5 V D ID MAX 65 A ăVCORE Applications ăDC-DC Converters ăHigh/Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 25 ±20 13 10 2.0 10.4 8.0 1.28 65 50 50 130 45 -55 to +175 42 6 84.5 W A A °C A V/ns mJ 4 Drain YWW 48 60NG W A CASE 369AA DPAK (Bent Lead) STYLE 2 W A 1 2 3 4 Unit V V A G S N-CHANNEL MOSFET 4 4 1 2 3 CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) 2 3 1 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 48 60NG 4 Drain YWW 48 60NG Free Datasheet http://www.datasheet4u.com/ Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source d...