N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP15T20AGH-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fa...
Description
AP15T20AGH-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristics ▼ RoHS Compliant & Halogen-Free G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
200V 250mΩ 10A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and using infrared reflow technique and suited for high current application due to the low connection resistance.
G D S
TO-252(H)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 200 +20 10 6.1 26 62.5 -55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value 2 62.5
Unit ℃/W ℃/W 1 201202291
Data & specifications subject to change without notice
Free Datasheet http://www.datasheet4u.com/
AP15T20AGH-HF
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf ...
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