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TK22A10N1 Dataheets PDF



Part Number TK22A10N1
Manufacturers Toshiba
Logo Toshiba
Description Silicon N-Channel MOSFET
Datasheet TK22A10N1 DatasheetTK22A10N1 Datasheet (PDF)

MOSFETs Silicon N-channel MOS (U-MOS-H) TK22A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 11.5 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TK22A10N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating .

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MOSFETs Silicon N-channel MOS (U-MOS-H) TK22A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 11.5 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TK22A10N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit) (Note 1,2) ID 52 A Drain current (DC) (Tc = 25) (Note 1) ID 22 Drain current (pulsed) (t = 1 ms) (Note 1) IDP 102 Power dissipation (Tc = 25) PD 30 W Single-pulse avalanche energy (Note 3) EAS 48 mJ Avalanche current IAR 22 A Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2012-01 1 2014-02-07 Rev.3.0 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150. Note 2: Limited by silicon chip capability. Note 3: VDD = 80 V, Tch = 25 (initial), L = 77.6 µH, IAR = 22 A TK22A10N1 Symbol Rth(ch-c) Rth(ch-a) Max Unit 4.16 /W 62.5 Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2014-02-07 Rev.3.0 TK22A10N1 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V   ±0.1 µA Drain cut-off current IDSS VDS = 100 V, VGS = 0 V   10 Drain-source breakdown voltage Drain-source breakdown voltage (Note 4) V(BR)DSS ID = 10 mA, VGS = 0 V V(BR)DSX ID = 10 mA, VGS = -20 V 100   V 65   Gate threshold voltage Vth VDS = 10 V, ID = 0.3 mA 2.0  4.0 Drain-source on-resistance RDS(ON) VGS = 10 V, ID = 11 A  11.5 13.8 mΩ Note 4: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode. 6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) Symbol Test Condition Ciss Crss Coss rg tr ton tf toff VDS = 50 V, VGS = 0 V, f = 1 MHz  See Figure 6.2.1 Min Typ. Max Unit  1800  pF  18   310   2.0  Ω  11  ns  27   11   38  Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Gate switch charge Symbol Test Condition Qg VDD ≈ 80 V, VGS = 10 V, ID = 22 A Qgs1 Qgd QSW Min Typ. Max Unit  28  nC  8.7   8.1   12  3 2014-02-07 Rev.3.0 TK22A10N1 6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Reverse drain current (DC) (Note 5) IDR  Reverse drain current (pulsed) (Note 5) IDRP  Diode forward voltage VDSF IDR = 22 A, VGS = 0 V Reverse recovery time Reverse recovery charge (Note 6) (Note 6) trr IDR = 22 A, VGS = 0 V Qrr -dIDR/dt = 100 A/µs Note 5: Ensure that the channel temperature does not exceed 150. Note 6: Ensure that VDS peak does not exceed VDSS. 7. Marking (Note) Min Typ. Max Unit   22 A   102   -1.2 V  54  ns  94  nC Fig. 7.1 Marking Note: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in elect.


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