Document
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK22A10N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 11.5 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA)
3. Packaging and Internal Circuit
TK22A10N1
1: Gate 2: Drain 3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Silicon limit)
(Note 1,2)
ID
52
A
Drain current (DC)
(Tc = 25)
(Note 1)
ID
22
Drain current (pulsed)
(t = 1 ms)
(Note 1)
IDP
102
Power dissipation
(Tc = 25)
PD
30
W
Single-pulse avalanche energy
(Note 3)
EAS
48
mJ
Avalanche current
IAR
22
A
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Start of commercial production
2012-01
1
2014-02-07
Rev.3.0
5. Thermal Characteristics
Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150. Note 2: Limited by silicon chip capability. Note 3: VDD = 80 V, Tch = 25 (initial), L = 77.6 µH, IAR = 22 A
TK22A10N1
Symbol
Rth(ch-c) Rth(ch-a)
Max
Unit
4.16
/W
62.5
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2
2014-02-07
Rev.3.0
TK22A10N1
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
±0.1
µA
Drain cut-off current
IDSS
VDS = 100 V, VGS = 0 V
10
Drain-source breakdown voltage Drain-source breakdown voltage
(Note 4)
V(BR)DSS ID = 10 mA, VGS = 0 V V(BR)DSX ID = 10 mA, VGS = -20 V
100
V
65
Gate threshold voltage
Vth
VDS = 10 V, ID = 0.3 mA
2.0
4.0
Drain-source on-resistance
RDS(ON) VGS = 10 V, ID = 11 A
11.5 13.8 mΩ
Note 4: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time)
Symbol
Test Condition
Ciss Crss Coss rg
tr ton tf toff
VDS = 50 V, VGS = 0 V, f = 1 MHz
See Figure 6.2.1
Min Typ. Max Unit
1800
pF
18
310
2.0
Ω
11
ns
27
11
38
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Gate switch charge
Symbol
Test Condition
Qg
VDD ≈ 80 V, VGS = 10 V, ID = 22 A
Qgs1 Qgd QSW
Min Typ. Max Unit
28
nC
8.7
8.1
12
3
2014-02-07
Rev.3.0
TK22A10N1
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (DC)
(Note 5)
IDR
Reverse drain current (pulsed)
(Note 5)
IDRP
Diode forward voltage
VDSF IDR = 22 A, VGS = 0 V
Reverse recovery time Reverse recovery charge
(Note 6) (Note 6)
trr
IDR = 22 A, VGS = 0 V
Qrr
-dIDR/dt = 100 A/µs
Note 5: Ensure that the channel temperature does not exceed 150. Note 6: Ensure that VDS peak does not exceed VDSS.
7. Marking (Note)
Min Typ. Max Unit
22
A
102
-1.2
V
54
ns
94
nC
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in elect.