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2SC5700 Dataheets PDF



Part Number 2SC5700
Manufacturers Renesas
Logo Renesas
Description Silicon NPN Transistor
Datasheet 2SC5700 Datasheet2SC5700 Datasheet (PDF)

2SC5700 Silicon NPN Epitaxial VHF/UHF wide band amplifier Features • High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline REJ03G0751-0100 (Previous ADE-208-1435) Rev.1.00 Aug.10.2005 RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R ) 3 Note: Marking is “WB–“. 1 2 1. Emitter 2. Base 3. Collector *MFPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings Parameter Collector to base vo.

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2SC5700 Silicon NPN Epitaxial VHF/UHF wide band amplifier Features • High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline REJ03G0751-0100 (Previous ADE-208-1435) Rev.1.00 Aug.10.2005 RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R ) 3 Note: Marking is “WB–“. 1 2 1. Emitter 2. Base 3. Collector *MFPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Value 15 4 1.5 50 80 150 −55 to +150 (Ta = 25°C) Unit V V V mA mW °C °C Rev.1.00 Aug 10, 2005 page 1 of 8 2SC5700 Electrical Characteristics Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Forward transmission coefficient Noise figure (Ta = 25°C) Symbol Min Typ Max Unit Test conditions V(BR)CBO 15   ICBO   0.1 ICEO   1 IEBO   200 hFE 100 130 170 Cob  0.4 0.7 V IC = 10 µA, IE = 0 µA VCB = 15 V, IE = 0 µA VCE = 4 V, RBE = ∞ nA VEB = 0.8 V, IC = 0 VCE = 1 V, IC = 5 mA pF VCB = 1 V, IE = 0, f = 1 MHz fT |S21|2 10 12  GHz VCE = 1V, IC = 5 mA 13 16  dB VCE = 1 V, IC = 5 mA, f = 900 MHz NF  1.0 1.7 dB VCE = 1 V, IC = 5 mA, f = 900 MHz, ZS = ZL = 50 Ω Rev.1.00 Aug 10, 2005 page 2 of 8 Collector Power Dissipation Pc (mW) 2SC5700 Main Characteristics Collector Power Dissipation Curve 100 80 60 40 20 0 50 100 150 200 Ambient Temperature Ta (°C) Collector Current IC (mA) Typical Transfer Characteristics 50 VCE = 1 V 40 30 20 10 0 0.2 0.4 0.6 0.8 1 Base to Emitter Voltage VBE (V) Collector Output Capacitance vs. Collector to Base Voltage 1.0 IE = 0 f = 1 MHz 0.8 0.6 0.4 0.2 0 0.4 0.8 1.2 1.6 2.0 Collector to Base Voltage VCB (V) Collector Output Capacitance Cob (pF) Rev.1.00 Aug 10, 2005 page 3 of 8 Gain Bandwidth Product fT (GHz) DC Current Transfer Ratio hFE Collector Current IC (mA) 500 µA Typical Output Characteristics 450 µA 50 400 µA 350 µA 40 300 µA 250 µA 30 200 µA 150 µA 20 100 µA 10 IB = 50 µA 0 1 2 3 4 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 200 VCE = 1 V 100 0 12 5 10 20 50 100 Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current 20 VCE = 1 V f = 2 GHz 16 12 8 4 0 12 5 10 20 50 100 Collector Current IC (mA) 2SC5700 S21 Parameter | S21 |2 (dB) S21 Parameter vs. Collector Current 20 VCE = 1V f = 2 GHz 16 12 8 4 0 12 5 10 20 50 100 Collector Current IC (mA) Noise Figure NF (dB) Noise Figure vs. Collector Current 5 VCE = 1 V f = 900 MHz 4 3 2 1 0 12 5 10 20 50 100 Collector Current IC (mA) S21 Parameter | S21 |2 (dB) S21 Parameter vs. Collector .


FJ5101BH 2SC5700 BCW68F


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