Document
2SC5700
Silicon NPN Epitaxial VHF/UHF wide band amplifier
Features
• High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)
Outline
REJ03G0751-0100 (Previous ADE-208-1435)
Rev.1.00 Aug.10.2005
RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R )
3
Note: Marking is “WB–“.
1 2
1. Emitter 2. Base 3. Collector
*MFPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC Pc Tj Tstg
Value 15 4 1.5 50 80 150
−55 to +150
(Ta = 25°C)
Unit V V V mA
mW °C °C
Rev.1.00 Aug 10, 2005 page 1 of 8
2SC5700
Electrical Characteristics
Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance
Gain bandwidth product Forward transmission coefficient
Noise figure
(Ta = 25°C)
Symbol Min Typ Max Unit
Test conditions
V(BR)CBO
15
ICBO
0.1
ICEO
1
IEBO
200
hFE
100 130 170
Cob
0.4
0.7
V IC = 10 µA, IE = 0 µA VCB = 15 V, IE = 0 µA VCE = 4 V, RBE = ∞ nA VEB = 0.8 V, IC = 0
VCE = 1 V, IC = 5 mA pF VCB = 1 V, IE = 0,
f = 1 MHz
fT |S21|2
10
12
GHz VCE = 1V, IC = 5 mA
13
16
dB VCE = 1 V, IC = 5 mA,
f = 900 MHz
NF
1.0
1.7
dB VCE = 1 V, IC = 5 mA,
f = 900 MHz,
ZS = ZL = 50 Ω
Rev.1.00 Aug 10, 2005 page 2 of 8
Collector Power Dissipation Pc (mW)
2SC5700
Main Characteristics
Collector Power Dissipation Curve 100 80 60 40 20
0
50
100
150
200
Ambient Temperature Ta (°C)
Collector Current IC (mA)
Typical Transfer Characteristics 50
VCE = 1 V 40
30
20
10
0
0.2 0.4 0.6 0.8
1
Base to Emitter Voltage VBE (V)
Collector Output Capacitance vs. Collector to Base Voltage
1.0 IE = 0 f = 1 MHz
0.8
0.6
0.4
0.2
0
0.4 0.8 1.2 1.6 2.0
Collector to Base Voltage VCB (V)
Collector Output Capacitance Cob (pF)
Rev.1.00 Aug 10, 2005 page 3 of 8
Gain Bandwidth Product fT (GHz)
DC Current Transfer Ratio hFE
Collector Current IC (mA) 500 µA
Typical Output Characteristics
450 µA
50
400 µA
350 µA
40
300 µA
250 µA
30
200 µA
150 µA 20
100 µA
10
IB = 50 µA
0
1
2
3
4
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs. Collector Current
200 VCE = 1 V
100
0 12
5 10 20 50 100
Collector Current IC (mA)
Gain Bandwidth Product vs. Collector Current
20 VCE = 1 V f = 2 GHz
16
12
8
4
0 12
5 10 20 50 100
Collector Current IC (mA)
2SC5700
S21 Parameter | S21 |2 (dB)
S21 Parameter vs. Collector Current
20 VCE = 1V f = 2 GHz
16
12
8
4
0 12
5 10 20 50 100
Collector Current IC (mA)
Noise Figure NF (dB)
Noise Figure vs. Collector Current
5 VCE = 1 V f = 900 MHz
4
3
2
1
0 12
5 10 20 50 100
Collector Current IC (mA)
S21 Parameter | S21 |2 (dB)
S21 Parameter vs. Collector .