2SC5700
Silicon NPN Epitaxial VHF/UHF wide band amplifier
Features
• High power gain low noise figure at low power opera...
2SC5700
Silicon
NPN Epitaxial VHF/UHF wide band amplifier
Features
High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)
Outline
REJ03G0751-0100 (Previous ADE-208-1435)
Rev.1.00 Aug.10.2005
RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R )
3
Note: Marking is “WB–“.
1 2
1. Emitter 2. Base 3. Collector
*MFPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC Pc Tj Tstg
Value 15 4 1.5 50 80 150
−55 to +150
(Ta = 25°C)
Unit V V V mA
mW °C °C
Rev.1.00 Aug 10, 2005 page 1 of 8
2SC5700
Electrical Characteristics
Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance
Gain bandwidth product Forward transmission coefficient
Noise figure
(Ta = 25°C)
Symbol Min Typ Max Unit
Test conditions
V(BR)CBO
15
ICBO
0.1
ICEO
1
IEBO
200
hFE
100 130 170
Cob
0.4
0.7
V IC = 10 µA, IE = 0 µA VCB = 15 V, IE = 0 µA VCE = 4 V, RBE = ∞ nA VEB = 0.8 V, IC = 0
VCE = 1 V, IC = 5 mA pF VCB = 1 V, IE = 0,
f = 1 MHz
fT |S21|2
10
12
GHz VCE = 1V, IC = 5 mA
13
16
dB VCE = 1 V, IC = 5 mA,
f = 900 MHz
NF
1.0
1.7
dB VCE = 1 V, IC ...