2SC5700

2SC5700 Silicon NPN Epitaxial VHF/UHF wide band amplifier Features High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline REJ03G0751-0100 (Previous ADE-208-1435) Rev.1.00 Aug.10.2005 RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R ) 3 Note: Marking is “WB–“. 1 2 1. Emitter 2. Base 3. Collector *MFPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Value 15 4 1.5 50 80 150 −55 to +150 (Ta = 25°C) Unit V V V mA mW °C °C Rev.1.00 Aug 10, 2005 page 1 of 8 2SC5700 Electrical Characteristics Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Forward transmission coefficient Noise figure (Ta = 25°C) Symbol Min Typ Max Unit Test conditions V(BR)CBO 15   ICBO   0.1 ICEO   1 IEBO   200 hFE 100 130 170 Cob  0.4 0.7 V IC = 10 µA, IE = 0 µA VCB = 15 V, IE = 0 µA VCE = 4 V, RBE = ∞ nA VEB = 0.8 V, IC = 0 VCE = 1 V, IC = 5 mA pF VCB = 1 V, IE = 0, f = 1 MHz fT |S21|2 10 12  GHz VCE = 1V, IC = 5 mA 13 16  dB VCE = 1 V, IC = 5 mA, f = 900 MHz NF  1.0 1.7 dB VCE = 1 V, IC ...