TECHNICAL SPECIFICATION
SEMICONDUCTOR
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
RECTRON
BCW68F
* Power dissipation ...
TECHNICAL SPECIFICATION
SEMICONDUCTOR
SOT-23 BIPOLAR
TRANSISTORS
TRANSISTOR(
PNP)
RECTRON
BCW68F
* Power dissipation PCM : 0.33 W (Tamb=25OC) * Collector current ICM : -0.8 A * Collector-base voltage V(BR)CBO : -60 V * Operating and storage junction temperature range O TJ,Tstg: -55 C to +150OC
FEATURES
SOT-23
COLLECTOR
3
MECHANICAL DATA
* * * * *
Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram
BASE
1
EMITTER
2
0.055(1.40) 0.047(1.20) 0.006(0.15) 0.003(0.08) 0.020(0.50) 0.012(0.30)
0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00)
0.020(0.50) 0.012(0.30)
0.100(2.55) 0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified. Single phase , half wave, 60H Z , resistive or inductive load. For capacitive load, derate current by 20%.
O
0.019(2.00) 0.071(1.80)
1 3 2
0.118(3.00) 0.110(2.80)
Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted )
O
CHARACTERISTICS Collector-base breakdown voltage (IC= -10mA, IE=0) Collector-emitter breakdown voltage (IC= -10mA, IB=0) Emitter-base breakdown voltage (IE= -10mA, IC=0) Collector cut-off current (VCB= -45V, IE=0) Collector cut-off current (VEB= -4V, IC=0) DC current gain (VCE= -10V, IC= -0.1mA) DC current gain (VCE= -1V, IC= -10mA) DC current gain (VCE= -1V, IC= -100mA) DC current gain (VCE= -2V, IC= -500mA) Collector...