CMLT2207

CMLT2207 SURFACE MOUNT PICOminiTM DUAL,COMPLEMENTARY SILICON TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMLT2207 consists of one 2N2222A NPN silicon transistor and one individual isolated complementary 2N2907A PNP silicon transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This PICOmini™ device has been designed for small signal general purpose amplifier and switching applications. MARKING CODE: L70 NPN (Q1) 75 40 6.0 600 350 -65 to +150 357 PNP (Q2) 60 60 5.0 UNITS V V V mA mW °C °C/W SOT-563 CASE MAXIMUM RATINGS: Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance (TA=25°C) SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL ICBO ICBO ICBO ICBO IEBO ICEV ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE TEST CONDITIONS VCB=60V VCB=50V VCB=60V, TA=125°C VCB=50V, TA=125°C VEB=3.0V VCE=60V, VEB(OFF)=3.0V VCE=30V, VEB(OFF)=500mV IC=10µA IC=10mA IE=10µA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=1.0V, IC=150mA VCE=10V, IC=500mA NPN (Q1) MIN MAX 10 10 10 10 75 40 6.0 0.3 1.0 0.6 1.2 2.0 35 50 75 100 300 50 40 PNP (Q2) MIN MAX 10 10 50 60 60 5.0 0.4 1.6 1.3 2.6...