2SK2869 Silicon MOSFET Datasheet

2SK2869 Datasheet, PDF, Equivalent


Part Number

2SK2869

Description

N-Channel Silicon MOSFET

Manufacture

Kexin

Total Page 1 Pages
Datasheet
Download 2SK2869 Datasheet


2SK2869
SMD Type
N-Channel Silicon MOSFET
2SK2869
MOSFICET
Features
Low on-resistance
RDS = 0.033 typ.
High speed switching
4V gate drive device can be driven from 5V source
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
Rating
60
20
20
80
30
150
-55 to +150
Unit
V
V
A
A
W
Symbol
VDSS
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
Testconditons
ID=10mA,VGS=0
VDS=60V,VGS=0
VGS= 16V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=10A
VGS=10V,ID=10A
VGS=4V,ID=10A
VDS=20V,VGS=0,f=1MHZ
ID=10A,VGS(on)=10V,RL=3
1 Gate
2 Drain
3 Source
Min Typ Max Unit
60 V
10 A
10 A
1.5 2.5 V
10 16
S
0.033 0.045
0.055 0.07
740 pF
380 pF
140 pF
10 ns
110 ns
105 ns
120 ns
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Features SMD Type N-Channel Silicon MOSFET 2SK286 9 IC MOSFET Features Low on-resistanc e RDS = 0.033 typ. +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm High speed switching +0.2 9.70-0.2 4V gate drive device can be driven from 5V sour ce +0.1 0.80-0.1 +0.15 0.50-0.15 0.1 27 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Param eter Drain to source voltage Gate to so urce voltage Drain current Power dissip ation Channel temperature Storage tempe rature * PW 10 s,Duty Cycle 1% Symbol V DSS VGSS ID Idp * PD Tch Tstg Rating 60 20 20 80 30 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 2 5 Parameter Drain to source breakdown v oltage Drain cut-off current Gate leaka ge current Gate to source cutoff voltag e Forward transfer admittance Drain to source on-state resistance Input capaci tance Output capacitance Reverse transfer capacitance Turn-on d.
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