N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2346GN-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Capable of 1.8V Gate Drive ▼ Lower Gate Charge ▼ Fa...
Description
AP2346GN-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Capable of 1.8V Gate Drive ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free
SOT-23 D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
S G
20V 21mΩ 6.5A
D
Description
AP2346 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current
1 3 3
Rating 20 +8 6.5 5.2 20 1.38 -55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 90
Unit ℃/W 1 201211051
Data and specifications subject to change without notice
Free Datasheet http://www.datasheet4u.com/
AP2346GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) P...
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