Freescale Semiconductor ‘ Technical Data
Document Number: MRFE6S8046N Rev. 0, 5/2009
RF Power Field Effect Transistors...
Freescale Semiconductor ‘ Technical Data
Document Number: MRFE6S8046N Rev. 0, 5/2009
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier amplifier applications. Typical GSM Performance: VDD = 28 Volts, IDQ = 300 mA, Pout = 35.5 Watts CW
Frequency 864 MHz 880 MHz 894 MHz Gps (dB) 19.9 20 19.8 hD (%) 58.7 58.5 57.7
MRFE6S8046NR1 MRFE6S8046GNR1
864 - 894 MHz, 35.5 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs
Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 70 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Typical Pout @ 1 dB Compression Point ] 47 Watts CW Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 285 mA, Pout = 17.8 Watts Avg.
Spectral Regrowth @ 400 kHz (dBc) 61.2 63.4 63.7 Spectral Regrowth @ 600 kHz (dBc) 70.9 72.5 73
CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRFE6S8046NR1
Frequency 864 MHz 880 MHz 894 MHz
Gps (dB) 19.8 19.9 19.8
hD (%) 43.8 43.6 43.1
EVM (% rms) 2.1 2 2
CASE 1487 - 05, STYLE 1 TO - 270 WB - 4 GULL PLASTIC MRFE6S8046GNR1 PARTS ARE SINGLE - ENDED
Features Class F Output Matched for Higher Impedances and Greater Efficiency Designed for High Efficiency. Typical Drain Efficiency @ P1dB ] 66% Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters Inte...
