SW50N06A

SAMWIN SW50N06A N-channel MOSFET BVDSS : 60V ID : 50A RDS(ON) : 0.023ohm 2 2 3 1 3 Features ■ High ruggedness ■ RDS(ON) (Max 0.023Ω)@VGS=10V ■ Gate Charge (Typ 36nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 1 2 1 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. Order Codes Item 1 2 Sales Type SW P 50N06A SW F 50N06A Marking SW50N06A SW50N06A Package TO-220 TO-220F Packaging TUBE TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt Total power dissipation (@TC=25oC) Derating Factor above 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (note 2) (note 1) (note 3) 110 0.9 -55 ~ + 150 300 (@TC=25oC) (note 1) 50 36 200 ± 20 412 13 7 42 0.34 Continuous Drain Current (@TC=100oC) Parameter Value TO-220 60 50* 36* TO-220F Unit V A A A V mJ mJ V/ns W W/oC oC oC *...