N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP1A003GMT-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ SO-8 Compatible with H...
Description
AP1A003GMT-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ SO-8 Compatible with Heatsink ▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
D
30V 0.99mΩ 260A
S
Description
AP1A003 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile.
D
D D
S
S
S
G
PMPAK ® 5x6
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Chip), VGS @ 10V Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current
1 3 3 4
Rating 30 +20 260 57 46 300 104 5 -55 to 150 -55 to 150
Units V V A A A A W W ℃ ℃
Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 1.2 25 Unit ℃/W ℃/W 1 201311181
Data and specifications subject to change without notice
Free Datasheet http://www.datasheet4u.com/
AP1A003GMT-HF
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