AP1J3P

DATA SHEET COMPOUND TRANSISTOR AP1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching PACKAGE DRAWING (UNIT: mm) FEATURES Current drive available up to 0.7 A On-chip bias resistor Low power consumption during drive AP1 SERIES LISTS Products AP1A4A AP1L2Q AP1A3M AP1F3P AP1J3P AP1L3N AP1A4M R1 (KΩ) − 0.47 1.0 2.2 3.3 4.7 10 R2 (KΩ) 10 4.7 1.0 10 10 10 10 Electrode Connection 1. Emitter EIAJ : SC-43B 2. Collector JEDEC: TO-92 3. Base IEC : PA33 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) * IB(DC) PT Tj Tstg Ratings −25 −25 −10 −0.7 −1.0 −0.02 750 150 −55 to +150 Unit V V V A A A mW °C °C * PW ≤ 10 ms, duty cycle ≤ 50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16171EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 Free Datasheet http://www.datasheet4u.com/ AP1 SERIES AP1A4A ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Colle...