(MBR1670CT - MBR16100CT)
MBR1670CT thru MBR16100CT
Dimensions TO-220AB
Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 ...
Description
MBR1670CT thru MBR16100CT
Dimensions TO-220AB
Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79
A C(TAB) A C A
C
A
A=Anode, C=Cathode, TAB=Cathode VRRM V 70 80 90 100 VRMS V 49 56 63 70 VDC V 70 80 90 100
MBR1670CT MBR1680CT MBR1690CT MBR16100CT Symbol I(AV) IFSM dv/dt
Characteristics Maximum Average Forward Rectified Current @TC=100oC
Maximum Ratings 16 125 10000 IF=8A IF=8A IF=16A IF=16A @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC 0.85 0.75 0.95 0.85 0.1 100 2.0 275 -55 to +150 -55 to +175
Unit A A V/us
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage (Note 1)
VF
V
IR ROJC CJ TJ TSTG
Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2)
mA
o
C/W pF
o o
Typical Junction Capacitance Per Element (Note 3) Operating Temperature Range Storage Temperature Range
C C
NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton * Guard rin...
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