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MPSA42

SeCoS

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente MPSA42 NPN Plastic Encapsulated Transistor FEATURES High Voltage NPN Transistor RoHS Compli...


SeCoS

MPSA42

File Download Download MPSA42 Datasheet


Description
Elektronische Bauelemente MPSA42 NPN Plastic Encapsulated Transistor FEATURES High Voltage NPN Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 CLASSIFICATION OF hFE (2) Product-Rank MPSA42-A Range 80~100 MPSA42-B 100~200 MPSA42-C 200~250 Collector 3 2 Base 1 Emitter 1Emitter 2Base 3Collector REF. A B C D E Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 REF. F G H J K Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current -Pulsed Collector Power Dissipation Junction, Storage Temperature Thermal Resistance, junction to Ambinet Thermal Resistance, junction to Case VCBO VCEO VEBO IC ICM PC TJ, TSTG RθJA RθJC 310 305 5 200 500 625 150, -55~150 200 83.3 UNIT V V V mA mA mW °C °C/ mW °C/ mW ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Collector to Base Breakdown Voltage V(BR)CBO 310 - - V IC=100µA, IE = 0A Collector to Emitter Breakdown Voltage V(BR)CEO 305 - - V IC=1mA, IB = 0A Emitter to Base Breakdown Voltage Collector Cut-Off Current V(BR)EBO ICBO 5 - - - V IE=100µA, IC = 0A - 0.25 µA VCB=200 V, IE = 0 A Emitter Cut-Off Current IEBO - - 0.1 µA VEB=5 V, IC =0 mA hFE(...




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