Elektronische Bauelemente
MPSA42
NPN Plastic Encapsulated Transistor
FEATURES
High Voltage NPN Transistor
RoHS Compli...
Elektronische Bauelemente
MPSA42
NPN Plastic Encapsulated
Transistor
FEATURES
High Voltage
NPN Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
TO-92
CLASSIFICATION OF hFE (2)
Product-Rank MPSA42-A
Range
80~100
MPSA42-B 100~200
MPSA42-C 200~250
Collector
3
2
Base
1
Emitter
1Emitter 2Base 3Collector
REF.
A B C D E
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
REF.
F G H J K
Millimeter Min. Max. 0.30 0.51
1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current -Pulsed Collector Power Dissipation Junction, Storage Temperature Thermal Resistance, junction to Ambinet Thermal Resistance, junction to Case
VCBO VCEO VEBO
IC ICM PC TJ, TSTG RθJA RθJC
310 305
5 200 500 625 150, -55~150 200 83.3
UNIT V V V mA mA
mW °C °C/ mW °C/ mW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
TEST CONDITION
Collector to Base Breakdown Voltage
V(BR)CBO
310
-
-
V IC=100µA, IE = 0A
Collector to Emitter Breakdown Voltage V(BR)CEO
305
-
-
V IC=1mA, IB = 0A
Emitter to Base Breakdown Voltage Collector Cut-Off Current
V(BR)EBO ICBO
5 -
- - V IE=100µA, IC = 0A
-
0.25
µA VCB=200 V, IE = 0 A
Emitter Cut-Off Current
IEBO - - 0.1 µA VEB=5 V, IC =0 mA
hFE(...