AO4406 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4406/L uses advanced trench technolo...
AO4406 N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4406/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4406 and AO4406L are electrically identical. -RoHS Compliant -AO4406L is Halogen Free
Features
VDS (V) = 30V ID = 11.5A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16.5mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested
D S S S G D D D D
G S
SOIC-8
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain AF Current Pulsed Drain Current Avalanche Current B Repetitive Avalanche Energy L=0.3mH TA=25° C Power Dissipation TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF A Maximum Junction-to-Ambient Maximum Junction-to-Lead C
B B
Maximum 30 ±12 11.5 9.6 80 25 94 3 2.1 -55 to 150
Units V V A A mJ W ° C
VGS C TA=25° TA=70° C ID IDM IAV EAV PD TJ, TSTG
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 23 48 12
Max 40 65 16
Units ° C/W ° C/W ° C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
AO4406
Electrical Characteristics (TJ=25° C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS...