AO4407A

AO4407A 30V P-Channel MOSFET General Description The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Features VDS = -30V ID = -12A (VGS = -20V) RDS(ON) < 11mΩ (VGS = -20V) RDS(ON) < 13mΩ (VGS = -10V) RDS(ON) < 17mΩ (VGS = -6V) SOIC-8 D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current G Repetitive avalanche energy L=0.3mH TA=25° C Power Dissipation A TA=70° C G B Maximum -30 ±25 -12 -10 -60 -26 101 3.1 2.0 -55 to 150 Units V V VGS TA=25° C C TA=70° ID IDM IAR EAR PD TJ, TSTG A mJ W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady State Steady State RθJA RθJL Typ 32 60 17 Max 40 75 24 Units ° C/W ° C/W ° C/W 1/5 www.freescale.net.cn Free Datasheet http://www.datasheet4u.com/ AO4407A 30V P-Channel MOSFET C unless otherwise noted) Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID = -250µA, VGS = 0V VDS = -30V, VGS = 0V TJ = 55° C VDS = 0V, VGS = ±25V VDS = VGS ID = -250µA VGS = -10V, VDS = -5V VGS = -20V, ID = -12A RDS(ON) Static Drain-Source On-Resistance C TJ=125° VGS = -10V, ID = -12A VGS = -6V, ID = -10A gFS VSD IS Forward ...