AO7403

AO7403 P-Channel Enhancement Mode Field Effect Transistor General Description The AO7403 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected to 2KV HBM. Standard Product AO7403 is Pb-free (meets ROHS & Sony 259 specifications). AO7403L is a Green Product ordering option. AO7403 and AO7403L are electrically identical. SC-70 (SOT-323) Top View G D S G S Features VDS (V) = -20V ID = -0.7A (VGS = -4.5V) RDS(ON) < 470mΩ (VGS = -4.5V) RDS(ON) < 625mΩ (VGS = -2.5V) RDS(ON) < 900mΩ (VGS = -1.8V) D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation A Maximum -20 ±8 -0.7 -0.5 -3 0.35 0.22 -55 to 150 Units V V A TA=25°C TA=70°C ID IDM PD TJ, TSTG TA=70°C W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Symbol A A t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 300 350 280 Max 360 425 320 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. Free Datasheet http://www.datasheet4u.com/ AO7403 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter...