P-Channel Enhancement Mode Field Effect Transistor
Freescale P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process t...
Description
Freescale P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SC70-3 saves board space Fast switching speed High performance trench technology
AO7407/ MC7407
P RO DU C T SU MMA RY V ) rDS(on) (O H M) DS (V 0.079 @ V G S = -4.5V -20 0.110 @ V G S = -2.5V
ID (A ) -1.7 -1.5
G D S
A BSOLUTE MA XIMUM RA TINGS (TA = 25 C UNLESS OTHERW ISE NOTED) Param eter Sym bol Maxim um Units -20 VDS Drain-Source Voltage V VGS ±8 G ate-Source Voltage Continuous Drain Current Pulsed Drain Current
b a a
o
TA=25 C TA=70 C
o
o
ID IDM IS
-1.7 -1.4 -2.5 ±0.28 0.34 0.22 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipation
a
TA=25 C TA=70 C
o
o
PD
Operating Junction and Storage Tem perature Range
TJ, Tstg -55 to 150
C
THERM A L RESISTA NCE RA TING S
Param eter M axim um Junction-to-Am bient
a
Sym bol t <= 5 sec Steady-State RTHJA
Maxim um 375 430
Units
o
C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1
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Freescale
AO7407/...
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