N-Channel MOSFET
AO7408
20V N-Channel MOSFET
General Description
Product Summary
The AO7408 uses advanced trench technology to provide...
Description
AO7408
20V N-Channel MOSFET
General Description
Product Summary
The AO7408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) RDS(ON) (at VGS=1.8V)
20V 2A < 62mΩ < 75mΩ < 85mΩ
SC-70-6
(SOT-363)
Top View
Bottom View
Top View
D1 D2 G3
6D 5D 4S
G
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Pin1
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID IDM
TA=25°C Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum 20 ±8 2 1.5 16 0.35 0.22
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 300 340 280
Max 360 425 320
D
S
Units V V A
W °C
Units °C/W °C/W °C/W
Rev 4: May 2015
www.aosmd.com
Page 1 of 5
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V VDS=20V, VGS=0V
IGSS VGS(th) ID(ON)
Gate-Body leakage current Gate Threshold Voltage On state drain current
VDS=0V, VGS=±8V VDS=VGS ID=250µA VGS=4.5V, VDS...
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