AO7410

AO7410 30V N-Channel MOSFET General Description The AO7410 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) 30V 1.7A < 55mΩ < 65mΩ < 85mΩ SC-70 (SOT-323) Top View Bottom View D D S D G G G S S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum 30 ±12 1.7 1.3 15 0.35 0.22 -55 to 150 Units V V A VGS C TA=25° TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 300 340 280 Max 360 425 320 Units ° C/W ° C/W ° C/W Rev 5: Dec. 2012 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AO7410 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=1.7A RDS(ON) Static Drain-Source On-Resistance TJ=125° C VGS=4.5V, ID=1.5A VGS=2.5V, ID=1A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=5V, ID=3...