AO7417

AO7417 20V P-Channel MOSFET General Description Product Summary The AO7417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.5V, in the small SOT363 footprint. This device is suitable for use in buck convertor. VDS ID (at VGS=-4.5V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) RDS(ON) (at VGS=-1.8V) RDS(ON) (at VGS=-1.5V) -20V -2A < 80mΩ < 100mΩ < 125mΩ < 150mΩ Top View SC-70-6 (SOT-323) Bottom View Top View D1 D2 G3 6D 5D 4S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B -2 ID -1.7 -1.9 -1.6 IDM -20 TA=25°C Power Dissipation A TA=70°C 0.63 PD 0.4 0.57 0.36 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 160 180 130 Max 200 220 160 Units V V A W °C Units °C/W °C/W °C/W Rev.1. 0: March 2013 www.aosmd.com Page 1 of 4 AO7417 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain ...