AO7412

AO7412 30V N-Channel MOSFET General Description The AO7412 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DCDC converters. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) 30V 1.7A < 55mΩ < 65mΩ < 85mΩ SC70-6L (SOT363) Top View Bottom View D D G Top View 1 2 3 6 5 4 D D S G D S Pin1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum 30 ±12 1.7 1.3 15 0.35 0.22 -55 to 150 Units V V A VGS C TA=25° TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 300 340 280 Max 360 425 320 Units ° C/W ° C/W ° C/W Rev 2: August 2011 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AO7412 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=1.7A RDS(ON) Static Drain-Source On-Resistance...