AOD2N60A

AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description Advanced High Voltage MOSFET technology Low RDS(ON) Low Ciss and Crss High Current Capability RoHS and Halogen Free Compliant Product Summary VDS @ Tj,max ID (at VGS=10V) RDS(ON) (at VGS=10V) 700V 2A < 4.7Ω Applications General Lighting for LED and CCFL AC/DC Power supplies for Industrial, Consumer, and Telecom 100% UIS Tested 100% Rg Tested TO252 DPAK Top View Bottom View Top View TO251A IPAK Bottom View TO-251 IPAK Top View Bottom View D D D S G AOD2N60A G S Orderable Part Number AOD2N60A AOI2N60A AOU2N60A S D G AOI2N60A G D S Package Type TO-252 TO-251A TO-251 S D G AOU2N60A G SD G S Form Tape & Reel Tube Tube Minimum Order Quantity 2500 4000 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentB TC=25°C TC=100°C Pulsed Drain Current C Avalanche Current C,I Repetitive avalanche energy C,I Single pulsed avalanche energy H Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±30 2 1.4 6 4.6 10.6 97 5 57 0.45 -50 to 150 300 Units V V A A mJ mJ V/ns W W/ oC °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junctio...