AOD2HC60

NTQtu5[PgPQlSł www.whxpcb.com AOD2HC60 600V,2.5A N-Channel MOSFET General Description The AOD2HC60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. Product Summary VDS @ Tj,max 700 IDM RDS(ON),max Qg,typ Eoss @ 400V 14A < 2Ω 7.6nC 1.6µC 100% UIS Tested! 100% Rg Tested! TO252 DPAK Top View Bottom View D D D S S G AOD2HC60 G G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Maximum 600 ±30 2.5 2 14 7.5 28 132 100 20 74 0.6 -50 to 150 300 Units V V A A mJ mJ V/ns W W/ oC ° C ° C Gate-Source Voltage Continuous Drain CurrentB Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F TC=25° C TC=100° C VGS ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS RθJC Typical 45 1.3 Maximum 55 0.5 1.7 Units ° C/W ° C/W ° C/W Rev.1.0 April 2013 www.aosmd.com Page ...