AOD210

AOD210 30V N-Channel MOSFET General Description The AOD210 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 70A < 3mΩ < 4mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D D G Bottom View D S G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH Power Dissipation B C C Maximum 30 ±20 70 55 390 23 18 68 231 150 75 2.7 1.7 -55 to 175 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W °C TC=25°C TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14.2 39 0.8 Max 17 47 1 Units °C/W °C/W °C/W Rev0 : May 2010 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOD210 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Condition...