AOD208
30V N-Channel MOSFET
General Description
The AOD208 uses Trench MOSFET technology that is uniquely optimized to ...
AOD208
30V N-Channel MOSFET
General Description
The AOD208 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a “
Schottky style” soft recovery body diode.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 54A < 4.4mΩ < 6.5mΩ
100% UIS Tested 100% Rg Tested
TO252 DPAK Top View D D G Bottom View
D
S G S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation
B C
Maximum 30 ±20 54 42 200 18 14 40 80 62 31 2.5 1.6 -55 to 175
Units V V A
TC=25°C TC=100°C TA=25°C TA=70°C
ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG
A A mJ W W °C
TC=100°C TA=25°C TA=70°C
Power Dissipation A
Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 15 41 2
Max 20 50 2.4
Units °C/W °C/W °C/W
Rev 0: Oct 2009
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Free Datasheet http://www.datasheet4u.com/
AOD208
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditi...